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description the pc3227tb is a silicon germanium (sige) monolithic integrated circuit designed as if amplifier for dbs tuners. this ic is manufactured using our 50 ghz f max uhs2 (u ltra h igh s peed process) sige bipolar process. features ? low current : i cc = 4.8 ma typ. @ v cc = 5.0 v output power : p o (sat) = ? 1.0 dbm typ. @ f = 1.0 ghz : p o (sat) = ? 3.5 dbm typ. @ f = 2.2 ghz high linearity : p o (1db) = ? 6.5 dbm typ. @ f = 1.0 ghz : p o (1db) = ? 8.0 dbm typ. @ f = 2.2 ghz power gain : g p = 22.0 db typ. @ f = 1.0 ghz : g p = 22.0 db typ. @ f = 2.2 ghz noise figure : nf = 4.7 db typ. @ f = 1.0 ghz : nf = 4.6 db typ. @ f = 2.2 ghz supply voltage : v cc = 4.5 to 5.5 v port impedance : input/output 50 ? applications if amplifiers in lnb for dbs converters etc. ordering information part number order number package marking supplying form pc3227tb-e3 pc3227tb-e3-a 6-pin super minimold (pb-free) note c3p embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. qty 3 kpcs/reel. note with regards to terminal solder (the solder contai ns lead) plated products (conv entionally plated), contact your nearby sales office. remark to order evaluation samples, please contact your nearby sales office. part number for sample order: pc3227tb data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. bipolar analog integrated circuit document no. pu10557ej02v0ds (2nd edition) date published july 2005 cp(k) printed in japan ? nec compound semiconductor devices, ltd. 2005
pin connections and in ternal block diagram pin no. pin name 1 input 2 gnd 3 gnd 4 output 5 gnd (top view) 3 2 1 4 5 6 c3p (bottom view) 4 5 6 3 2 1 (top view) 3 2 1 4 5 6 6 v cc product line-up of 5 v-bias silicon mmic wideband amplifier (t a = +25c, f = 1 ghz, v cc = 5.0 v, z s = z l = 50 ? ) part no. f u (ghz) p o (sat) (dbm) g p (db) nf (db) i cc (ma) package marking pc2711tb 2.9 +1.0 13 5.0 12 6-pin super minimold c1g pc2712tb 2.6 +3.0 20 4.5 12 c1h pc3215tb note 2.9 +3.5 20.5 2.3 14 c3h pc3224tb 3.2 +4.0 21.5 4.3 9.0 c3k pc3227tb 3.2 ? 1.0 22 4.7 4.8 c3p note pc3215tb is f = 1.5 ghz remark typical performance. please refer to electrical characteristics in detail. data sheet pu10557ej02v0ds 2 pc3227tb
absolute maximum ratings parameter symbol conditions ratings unit supply voltage v cc t a = +25c 6.0 v total circuit current i cc t a = +25c 15 ma power dissipation p d t a = +85 c note 270 mw operating ambient temperature t a ? 40 to +85 c storage temperature t stg ? 55 to +150 c input power p in t a = +25c +10 dbm note mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass pwb recommended operating range parameter symbol conditions min. typ. max. unit supply voltage v cc 4.5 5.0 5.5 v operating ambient temperature t a ? 40 +25 +85 c data sheet pu10557ej02v0ds 3 pc3227tb
electrical characteristics (t a = +25c, v cc = 5.0 v, z s = z l = 50 ? ) parameter symbol test conditions min. typ. max. unit circuit current i cc no input signal 4.0 4.8 6.0 ma power gain 1 g p 1 f = 0.1 ghz, p in = ? 40 dbm 20.5 22.5 24.5 db power gain 2 g p 2 f = 1.0 ghz, p in = ? 40 dbm 19.5 22.0 24.5 power gain 3 g p 3 f = 1.8 ghz, p in = ? 40 dbm 19.0 22.0 25.0 power gain 4 g p 4 f = 2.2 ghz, p in = ? 40 dbm 19.0 22.0 25.0 power gain 5 g p 5 f = 2.6 ghz, p in = ? 40 dbm 19.0 22.0 25.0 power gain 6 g p 6 f = 3.0 ghz, p in = ? 40 dbm 18.0 21.0 24.5 saturated output power 1 p o (sat) 1 f = 1.0 ghz, p in = ? 12 dbm ? 3.5 ? 1.0 ? dbm saturated output power 2 p o (sat) 2 f = 2.2 ghz, p in = ? 12 dbm ? 6.0 ? 3.5 ? gain 1 db compression output power 1 p o (1 db) 1 f = 1.0 ghz ? 9.0 ? 6.5 ? dbm gain 1 db compression output power 2 p o (1 db) 2 f = 2.2 ghz ? 11.0 ? 8.0 ? noise figure 1 nf1 f = 1.0 ghz ? 4.7 5.5 db noise figure 2 nf2 f = 2.2 ghz ? 4.6 5.5 isolation 1 isl1 f = 1.0 ghz, p in = ? 40 dbm 35 40 ? db isolation 2 isl2 f = 2.2 ghz, p in = ? 40 dbm 35 43 ? input return loss 1 rl in 1 f = 1.0 ghz, p in = ? 40 dbm 7.5 10.5 ? db input return loss 2 rl in 2 f = 2.2 ghz, p in = ? 40 dbm 7.5 10.5 ? output return loss 1 rl out 1 f = 1.0 ghz, p in = ? 40 dbm 10.0 13.5 ? db output return loss 2 rl out 2 f = 2.2 ghz, p in = ? 40 dbm 7.5 9.5 ? input 3rd order distortion intercept point 1 iip 3 1 f1 = 1 000 mhz, f2 = 1 001 mhz, p in = ? 40 dbm ? ? 18.0 ? dbm input 3rd order distortion intercept point 2 iip 3 2 f1 = 2 200 mhz, f2 = 2 201 mhz, p in = ? 40 dbm ? ? 20.5 ? output 3rd order distortion intercept point 1 oip 3 1 f1 = 1 000 mhz, f2 = 1 001 mhz, p in = ? 40 dbm ? +4.0 ? dbm output 3rd order distortion intercept point 2 oip 3 2 f1 = 2 200 mhz, f2 = 2 201 mhz, p in = ? 40 dbm ? +1.5 ? 2nd order intermodulation distortion im 2 f1 = 1 000 mhz, f2 = 1 001 mhz, p in = ? 40 dbm ? 30.5 ? dbc k factor 1 k1 f = 1.0 ghz ? 3.8 ? ? k factor 2 k2 f = 2.2 ghz ? 3.9 ? ? data sheet pu10557ej02v0ds 4 pc3227tb
test circuit v cc 1 000 pf c 3 c 1 100 pf in 50 ? 6 4 1 2, 3, 5 100 pf c 2 50 ? out 1 000 pf c 4 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. components of test circuit for measuring electrical characteristics type value c1, c2 chip capacitor 100 pf c3 chip capacitor 1 000 pf c4 feed-through capacitor 1 000 pf capacitors for v cc and input pins bypass capacitor for v cc pin is intended to minimize v cc pin?s ground impedance. theref ore, stable bias can be supplied against v cc fluctuation. coupling capacitors for input/output pins are intended to minimize rf serial impedance and cut dc. data sheet pu10557ej02v0ds 5 pc3227tb
illustration of the test circuit assembled on evaluation board in out v cc amp-2 c1 c2 c3 c4 notes 1. 30 30 0.4 mm double sided copper clad polyimide board. 2. back side: gnd pattern 3. solder plated on pattern 4. : through holes component list value c1, c2 100 pf c3, c4 1 000 pf data sheet pu10557ej02v0ds 6 pc3227tb
typical characteristics (t a = +25 c, v cc = 5.0 v, z s = z l = 50 ? , unless otherwise specified) 01 3 6 5 4 3 2 1 245 6 ?60 ?40 0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 ?20 20 60 80 100 40 0.1 0.3 0.5 4.0 30 25 20 15 10 5 0 2.0 1.0 0.1 0.3 0.5 4.0 0 ?10 ?20 ?30 ?40 ?50 ?60 2.0 1.0 0.1 0.3 0.5 4.0 0 ?5 ?10 ?15 ?20 ?25 ?30 2.0 1.0 0.1 0.3 0.5 4.0 0 ?5 ?10 ?15 ?20 ?25 ?30 2.0 1.0 +25 c ?40 c t a = +85 c 5.0 v v cc = 5.5 v 4.5 v v cc = 4.5 v 5.5 v 5.0 v v cc = 4.5 v 5.0 v 5.5 v v cc = 4.5 v 5.5 v 5.0 v circuit current vs. supply voltage circuit current i cc (ma) supply voltage v cc (v) no input signal no input signal circuit current vs. operating ambient temperature circuit current i cc (ma) operating ambient temperature t a ( c) power gain vs. frequency frequency f (ghz) power gain g p (db) isolation vs. frequency frequency f (ghz) isolation isl (db) input return loss vs. frequency frequency f (ghz) input return loss rl in (db) output return loss vs. frequency frequency f (ghz) output return loss rl out (db) remark the graphs indicate nominal characteristics. data sheet pu10557ej02v0ds 7 pc3227tb
+5 0 ?5 ?10 ?15 ?20 ?40 ?30 ?25 ?10 ?15 ?20 ?35 f = 1.0 ghz +5 0 ?5 ?10 ?15 ?20 ?40 ?30 ?25 ?10 ?15 ?20 ?35 f = 2.2 ghz 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 1 000 3 000 1 500 500 2 500 2 000 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 1 000 3 000 1 500 500 2 500 2 000 v cc = 5.5 v 5.0 v 4.5 v v cc = 5.5 v 5.0 v 4.5 v v cc = 4.5 v 5.0 v 5.5 v +25 c ?40 c t a = +85 c output power vs. input power output power p out (dbm) input power p in (dbm) output power vs. input power output power p out (dbm) input power p in (dbm) noise figure vs. frequency frequency f (mhz) noise figure nf (db) noise figure vs. frequency frequency f (mhz) noise figure nf (db) remark the graphs indicate nominal characteristics. data sheet pu10557ej02v0ds 8 pc3227tb
+10 0 ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?50 ?30 0 ?20 ?10 ?40 f 1 = 1 000 mhz f 2 = 1 001 mhz im 3 p out +10 0 ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?50 ?30 0 ?20 ?10 ?40 f 1 = 2 200 mhz f 2 = 2 201 mhz im 3 p out +10 0 ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?60 ?30 0 ?20 ?10 ?40 im 2 p out ?50 50 40 30 20 10 0 ?60 ?30 ?10 ?20 ?40 ?50 output power, im 3 vs. input power output power p out (dbm) 3rd order intermodulation distortion im 3 (dbm) input power p in (dbm) output power, im 3 vs. input power output power p out (dbm) 3rd order intermodulation distortion im 3 (dbm) input power p in (dbm) output power, im 2 vs. input power output power p out (dbm) 2nd order intemodulation distortion im 2 (dbm) input power p in (dbm) im 2 vs. input power 2nd order intermodulation distortion im 2 (dbc) input power p in (dbm) remark the graphs indicate nominal characteristics. data sheet pu10557ej02v0ds 9 pc3227tb
s-parameters (t a = +25 c, v cc = 5.0 v, p in = ? 40 dbm) s 11 ? frequency 1 : 1 000 mhz 91.02 ?? 2.3789 ? 2 : 2 200 mhz 82.914 ?? 26.738 ? 1 2 start : 100.000 000 mhz stop : 5 100.000 000 mhz s 22 ? frequency 1 1 : 1 000 mhz 77.086 ? 6.1797 ? 2 : 2 200 mhz 92.535 ?? 28.438 ? 2 start : 100.000 000 mhz stop : 5 100.000 000 mhz data sheet pu10557ej02v0ds 10 pc3227tb
package dimensions 6-pin super minimold (unit: mm) 0.90.1 0.7 0 to 0.1 0.15 +0.1 ?0.05 0.2 +0.1 ?0.05 2.00.2 1.3 0.65 0.65 1.250.1 2.10.1 0.1 min. data sheet pu10557ej02v0ds 11 pc3227tb
notes on correct use (1) observe precautions for handling becaus e of electro-static sensitive devices. (2) form a ground pattern as widely as possible to minimize ground impedance (to pr event undesired oscillation). all the ground terminals must be connec ted together with wide ground pattern to decrease impedance difference. (3) the bypass capacitor should be attached to the v cc line. (4) the dc cut capacitor must be attached to input and output pin. recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recomm ended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperatur e (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering met hods together (except for partial heating). data sheet pu10557ej02v0ds 12 pc3227tb
when the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the au thority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license . m8e 00. 4 - 0110 the information in this document is current as of july, 2005. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product be fore using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ? data sheet pu10557ej02v0ds 13 pc3227tb
nec compound semiconductor devices hong kong limited e-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-0 fax: +49-211-6503-1327 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0504 nec compound semiconductor devices, ltd. http://www.ncsd.necel.com/ e-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) sales division tel: +81-44-435-1573 fax: +81-44-435-1579 for further information, please contact pc3227tb

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